Table of Contents

I. Introduction.- 1. Ultraclean Technology for VLSI Manufacturing: An Overview.- II. Influence of Contamination on Silicon Device Characteristics.- 2. Influence of Silicon Crystal Quality on Device Characteristics.- 3. Influence of Contaminants on Device Characteristics.- 4. Influence of Metallic Contamination on Dielectric Degradation of MOS Structures.- 5. Influence of Micro-Roughness on Device Characteristics.- III. Mechanisms of Particle Adhesion on Wafer Surfaces.- 6. Particle Deposition in Air.- 7. Particle Deposition in Plasma.- 8. Particle Deposition in Vacuum.- 9. Particle Adhesion in Liquids.- 10. Particle Adhesion and Removal on Wafer Surfaces in RCA Cleaning.- 11. Effects of Electrostatic Charge on Particle Adhesion on Wafer Surfaces.- IV. Analysis and Evaluation of Silicon Wafer Surfaces: Fundamentals.- 12. Measurement of Particles on Wafer Surfaces.- 13. Analysis and Evaluation of Impurities on Wafer Surfaces.- 14. Analysis and Evaluation of Molecules Adhered to Wafer Surfaces.- 15. Electrical Evaluation of Metallic Impurities on Wafer Surfaces.- 16. Analysis of Microscopic Areas on Wafer Surfaces Using STM/AFM.- V. Analysis and Evaluation of Wafer Surfaces: Applications to Semiconductor Manufacturing Lines.- 17. Detection and Analysis of Particles in Production Lines.- 18. Pattern Defect Monitoring in Production Lines.- 19. Clean Level Monitoring in Production Lines.- 20. Analysis of Defects in Devices and Silicon Crystals in Production Lines.- VI. Ultraclean Technology for Wafer Processes and Equipment.- 21. Oxidation and Diffusion.- 22. CVD (Part 1): Atmospheric Pressure/Low-Pressure CVD.- 23. CVD (Part 2): Plasma CVD.- 24. CVD (Part 3): Metal CVD.- 25. Physical Vapor Deposition.- 26. Dry Etching (Part 1): Particulate Contamination Due to Dry Etching.-27. Dry Etching (Part 2): Influence of Chemical Contamination and Defects on Dry Etching.- 28. Ion Implantation.- 29. Lithography.- 30. CMP.- 31. Cluster Tools.- VII. Cleaning Silicon Wafer Surfaces.- 32. Trends in Wafer Cleaning Technology.- 33. Wet Cleaning (Part 1): Removal of Particulate Contaminants.- 34. Wet Cleaning (Part 2): Removal of Metallic Contaminants.- 35. Wet Cleaning (Part 3): Removal of Organic Contaminants.- 36. Wet Cleaning (Part 4): Micro-Roughness and COPs Created by SC-1.- 37. Wafer Drying After Wet Cleaning.- 38. Watermarks: Generation, Control, and Removal.- 39. Physical Cleaning.- 40. Dry Cleaning.- VIII. Wafer-Cleaning-Related Issues.- 41. HF Vapor Cleaning Technology.- 42. Native Oxide Films and Chemical Oxide Films.- 43. Hydrogen Termination: The Ideally Finished Silicon Surface.- 44. Adsorption of Organic Volatiles on Silicon Surfaces and Their Removal by Wet Cleaning.- 45. Wafer Carrier Cleaning.- 46. Goals for Next-Generation Wafer Cleaning Technology.